Integrated circuits using embedded III-V-on-Ge MHEMTs in multi-layer thin-film technology
نویسندگان
چکیده
In this paper a demonstrator oscillator circuit integrated in a MCM-D on glass technology is presented. The active device of the oscillator is a thin-film Ge (germanium) -based MHEMT. The MHEMT is embedded in the bottom dielectric layer of the MCM-D. The combination of passive MCM-D technology and MHEMTs on Ge allows for efficient semi-monolithic integration of active devices and realisation of (optoelectronic) MCMs with embedded passive and active components.
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